(Sr.) Technology Development Engineer - GaN (m/f/d)

This is your team

Nexperia is a world-class company in semiconductor development and in-house production. A proven global player with an entrepreneurial mentality. At our core is an 12,000+ strong international network with a singular focus. Built on passion and commitment to our work, belief in our goals and a drive to succeed regardless of the challenges we face. We support, reward and challenge individuals equally, in a dynamic and energetic environment.

Looking to push boundaries in a company where your talents can shine? Join TeamNexperia.

Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions.

Your tasks

About the role

As (Sr.) Technology Development Engineer (m/f/d), you will join our talented and ambitious R&D team, directly contributing to our ability to successfully produce Gallium Nitride (GaN) devices.

This is your new job

• Lead the development of GaN process modules (etch, deposition, metallization, passivation..etc) to improve device performance.
• Collaborate with fab engineers to ensure the manufacturability, stability and scalability of the new technologies.
• Collaborate with design and device engineers to translate concepts into process flows.
• Explore new material, process chemistry and integration schemes to push performance, reliability and manufacturability.
• Conduct DOE experiments, analyze results, and identify optimal process conditions

This is you

• Masters, or Ph.D. degree or equivalent experience in Electrical Engineering or Solid-State Physics with specific Know-how and hands-on experience in semiconductor process and characterization, especially for GaN Technology