Jobbörse

Lead Principal Engineer Device Development RF-GaN (w/m/div)

Veröffentlicht am 18. Sept. 2026

Im Job Fit analysieren

Infineon Technologies AG

Regensburg

EnglischLeadDeutsch nicht nötig

Zur Originalanzeige

Speichern legt die Bewerbungsmappe an.

Job Fit

Sehen Sie, wie nah Ihr Profil an dieser Anzeige ist.

Gehalt (Schätzung)

Grobe Schätzung: 44.000 €–75.000 €/Jahr

Über diese Stelle

#WeAreIn for technologies that power the future.

Join a team driving cutting-edge RF-GaN innovation for next-generation RF power applications. As a

Lead Principal Engineer Device Development RF-GaN (f/m/div), you'll combine deep technical expertise with pioneering development work, shaping advanced device technologies from concept to production while collaborating with international experts across disciplines. **Are you in?**

Your role

Key responsibilities in your new role:

**Shape the future:** Development of

leading-edge RF-GaN/Si device technologies for RF power applications from process concept to production handover - **Creativity:** Implementation of novel process and device concepts for next-generation RF-GaN/Si technology platforms - **Data is everything:** Optimization of device performance and reliability as well as development of required characterization methods - **Stakeholder management:** Coordination with project management, process development, characterization, product design and customers - **Teamwork makes the dream work:** Collaboration within an international multi-site environment - **Take responsibility:** Advancement of RF-GaN/Si device technology development with a focus on high-performance applications

Qualifications and skills to help you succeed:

Degree: You hold a Master's degree or PhD in Microelectronics, Electrical Engineering or Physics- Work experience: You bring more than 10 years of experience in GaN device technology development - Personality: You demonstrate a high level of initiative, self-motivation, result orientation and a proactive mindset- Working style: You contribute strong team player skills and a clear focus on achieving results and moving forward- Skills: You possess in-depth GaN device knowledge for RF applications as well as a strong background in semiconductor physics and technology- Languages: You communicate confidently in English and can present complex topics effectively

#WeAreIn for driving decarbonization and digitalization.

As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.

We are on a journey to create the best Infineon for everyone.

We strive to create the best Infineon for everyone by embracing diversity and inclusion. We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity.

Our hiring decisions are based on skills and experience. Even if you don’t meet every requirement, we encourage you to apply.

Please let your recruiter know if you need any accommodations during the interview process.

Learn more about our various [contact channels](https://www.infineon.com/cms/en/about-infineon/company/contacts/) and about [Diversity & Inclusion](https://www.infineon.com/cms/en/careers/diversity-and-inclusion/) at Infineon.

https://www.linkedin.com/in/franziska-m-5057582/

Wir zeigen einen Auszug und einen Link je Anzeige, und den vollen Text, wenn die Quelle es erlaubt. Genannte Marken und Logos gehören ihren Inhabern.

Eckdaten der Stelle

Arbeitgeber: Infineon Technologies AG
Position: Lead Principal Engineer Device Development RF-GaN (w/m/div)
Stadt: Regensburg
Arbeitsmodell: nicht angegeben
Sprache: Englisch
Erfahrungsstufe: Lead
Veröffentlicht: 18. Sept. 2026
Quelle: Bundesagentur für Arbeit

Bewertung des Unternehmens

Glassdoor 4,2
5982 Bewertungen
Auf Glassdoor ansehen