Development Engineer and Project Lead PowerGaN Metallization (f/m/div)

• A university degree in Microsystems Engineering, Electrical Engineering, Physics, or a related scientific or engineering discipline- At least 5 years of relevant experience in process technology development and/or process integration, ideally within semiconductor metallization- Proven skills in technical leadership and project management- A high level of initiative, ownership, and motivation- Strong communication and collaboration skills in international environments- Fluency in both German and English, with the ability to communicate and present effectively in both languages

#WeAreIn for driving decarbonization and digitalization.

As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.

Are you in?

We are on a journey to create the best Infineon for everyone.

We strive to create the best Infineon for everyone by embracing diversity and inclusion. We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity.

Our hiring decisions are based on skills and experience. Even if you don’t meet every requirement, we encourage you to apply.

Please let your recruiter know if you need any accommodations during the interview process.

Learn more about our various [contact channels](https://www.infineon.com/cms/en/about-infineon/company/contacts/) and about [Diversity & Inclusion](https://www.infineon.com/cms/en/careers/diversity-and-inclusion/) at Infineon.

Nicole Hippmann

Wir zeigen einen Auszug und einen Link je Anzeige, und den vollen Text, wenn die Quelle es erlaubt. Genannte Marken und Logos gehören ihren Inhabern.

Quelle: Statistisches Bundesamt (Destatis), Tabelle; dl-de/by-2-0; eigene Berechnung